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SMD Type
Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Large collector current IC.
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage 2SD1257 2SD1257A Collector-emitter voltage 2SD1257 2SD1257A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 130 150 80 100 7 7 15 1.3 40 Junction temperature Storage temperature 150 -55 to +150 Unit V V V V V A A W W
3.80
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1
SMD Type
2SD1257,2SD1257A
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage 2SD1257 2SD1257A Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO IEBO hFE VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 3 A VCE = 2 V, IC = 0.1A VCE(sat) IC = 5 A, IB = 0.25 A VBE(sat) IC = 5 A, IB = 0.25 A fT ton tstg tf VCE = 10 V, IC = 0.5 A, f = 10 MHz IC=3A IB1=-IB2=0.3 A VCC=50V Symbol VCEO Testconditons IC = 10 mA, IB = 0
Transistors
Min 80 100
Typ
Max
Unit V V
10 50 90 45 0.5 1.5 30 0.5 1.5 0.1 260
iA iA
V V MHz is is is
hFE Classification
Rank hFE Q 90 180 P 130 260
2
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